Quartz Tube Semiconductor Grade Clear Fused Silica For Diffusion Furnace Wafer Process Vacuum Sealing Laboratory Custom Size
Detalles del producto
| Densidad: | 2.2g/cm3 | Punto de fusión: | 1750-1850 ℃ |
|---|---|---|---|
| Punto de recocido: | 1180 ℃ | Material: | SiO2> 99.99% |
| Punto de deformación: | 1100℃ | Dureza: | Morse 6.5 |
Descripción del Producto
Aspectos destacados del producto
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